NDLI: The chemistry of the organometallic vapor-phase epitaxy of mercury cadmium telluride

Content Provider	IEEE Xplore Digital Library
Author	Hicks, R.F.
Copyright Year	1963
Abstract	This review of the organometallic vapor-phase epitaxy (OMVPE) of mercury cadmium telluride examines the chemistry underlying film growth, film morphology, heteroepitaxy, doping, and reactor design. A key feature of the OMVPE of II-VI compounds, as distinguished from the OMVPE of III-V compounds, is that the intrinsic reaction kinetics control film growth. The rates of surface and gas-phase reactions determine the rate of deposition and the alloy composition. As a result, the quality of the material produced is very sensitive to the substrate temperature and the distribution of reactants in the gas above the substrate. Another crucial aspect of the growth chemistry is that cadmium telluride shows a strong tendency to grow in the 111(Te) orientation. This makes it difficult to establish layer-by-layer growth on the
Sponsorship	IEEE Publication
Starting Page	1625
Ending Page	1640
Page Count	16
File Size	1947271
File Format	PDF
ISSN	00189219
Volume Number	80
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-10-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Chemistry Epitaxial growth Cadmium compounds III-V semiconductor materials Surface morphology Substrates Doping Inductors Kinetic theory Temperature distribution
Content Type	Text
Resource Type	Article
Subject	Computer Science Electrical and Electronic Engineering

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