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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sato, K. Kobayashi, M. Hida, H. Miyazawa, H. Shirai, Y. Fujita, K. Nakao, T. Ishihara, M. |
| Copyright Year | 1966 |
| Abstract | A system integrated LSI chip (SLSI) that contains eleven 4-Mb DRAMs, six 64-kb SRAMs, and an 18 K-gate array, for a graphics application system is described. To implement the SLSI on a silicon chip, three key techniques have been developed: (1) system redundancy for defect relief; (2) chip configuration and fabrication with blade masking to achieve a hybrid 38.16*50.4-mm/sup 2/ chip; and (3) large-capability and high-reliability 324-pin 54*86-mm/sup 2/ plastic pin grid array package. Using a system redundancy technique, a 60% yield for the SLSI is achieved with a 40% yield for the DRAM itself. That is twice the 30% yield of the conventional repair scheme. Access times are 65 ns for the DRAM and 14 ns for the SRAM with a 3.9-W chip power dissipation.< |
| Sponsorship | IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE |
| Starting Page | 1608 |
| Ending Page | 1613 |
| Page Count | 6 |
| File Size | 718732 |
| File Format | |
| ISSN | 00189200 |
| Volume Number | 27 |
| Issue Number | 11 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1992-11-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Random access memory Large scale integration Packaging Logic arrays Graphics Redundancy Fabrication Nonvolatile memory Control systems Cache memory |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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