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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Singh, V.P. Morton, D.C. |
| Copyright Year | 1963 |
| Abstract | An analytical model for electroluminescence in SrS:Ce AC thin-film electroluminescent display devices is presented. The model incorporates an exact calculation of the electric field and the effect of activator ionization and bulk traps. Activator ionization is needed to explain several features of luminescence behavior in SrS:Ce devices. These features include the second luminescence peak at the trailing edge of the voltage pulse and the time lag between the luminescence and the applied voltage when the applied voltage consists of bipolar trapezoidal pulses and rectangular pulses of low voltage amplitudes. As a mechanism for the ionization of activators, field-assisted tunneling is shown to be more likely than impact ionization by hot electrons. Physical processes are described in terms of rate equations, and field, current, and luminescence waveforms are calculated for one set of device parameters. The calculated and experimental luminescence waveforms agree.< |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 1331 |
| Ending Page | 1340 |
| Page Count | 10 |
| File Size | 942803 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 39 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1992-06-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electroluminescent devices Displays Luminescence Ionization Analytical models Thin film devices Electric fields Electron traps Low voltage Tunneling |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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