NDLI: Low-resistance ohmic contacts for microwave and lightwave devices

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Low-resistance ohmic contacts for microwave and lightwave devices

Content Provider	IEEE Xplore Digital Library
Author	Verlangieri, P.A. Kuznetsov, M. Schneider, M.V.
Copyright Year	1991
Abstract	The fabrication of low-resistance ohmic contacts to n- and p-type compound semiconductor layers is reported. Each contact consists of a five-layer structure of evaporated metal that is alloyed at a critical temperature. Measurements of the alloyed contacts showed resistances in the 10/sup -7/- Omega -cm/sup 2/ range, which is lower than previously obtained results from conventional three-layer metallization systems produced by evaporation of an appropriate eutectic alloy. The morphology of the contacts was excellent, with good linewidth control and completely reproducible results, which makes them useful for fabricating high-speed devices with low series resistances and high cut-off frequencies. Details of the contact-formation processes are provided.<>
Starting Page	51
Ending Page	53
Page Count	3
File Size	195792
File Format	PDF
ISSN	10518207
Volume Number	1
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-03-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ohmic contacts Microwave devices Gold Zinc Substrates Fabrication Metallization Indium phosphide Temperature Contact resistance
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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