NDLI: Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 mu m InGaAs/InGaAsP MQW and strained-MQW lasers

Content Provider	IEEE Xplore Digital Library
Author	Shimizu, J. Yamada, H. Murata, S. Tomita, A. Kitamura, M. Suzuki, A.
Copyright Year	1989
Abstract	Optical-confinement-factor Gamma dependencies of the K factor, differential gain, dg/dN, and nonlinear gain coefficient epsilon , for 1.55 mu m InGaAs/InGaAsP multiple-quantum-well (MQW) and compressively strained MQW lasers, were investigated experimentally. For both MQW and strained-MQW lasers, when Gamma is increased, the K factor is reduced, dg/dN is increased, but epsilon is almost constant. These results indicate that the Gamma dependence of the K factor mainly results from a change in dg/dN, and does not result from a change in epsilon . For the strained MQW lasers, the K factor, dg/dN, and epsilon are, respectively, half as large, twice as large, and the same as those for the MQW lasers, when both types of lasers have the same Gamma (=0.05). This suggests that the strained MQW lasers with a large Gamma have a small K factor and thus are preferable for achieving large modulation bandwidths.<>
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	773
Ending Page	776
Page Count	4
File Size	406895
File Format	PDF
ISSN	10411135
Volume Number	3
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nonlinear optics Quantum well devices Semiconductor lasers High speed optical techniques Laser transitions Optical modulation Bandwidth Indium gallium arsenide Digital communication Conductors
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Optical Confinement Factor Dependence of K-factor, Differential Gain and Nonlinear Gain in 1.55/spl mu/m Mqw and Strained Mqw Lasers

Comparision of InGaAs absorptive grating structures in 1.55 /spl mu/m InGaAsP/InP strained MQW gain-coupled DFB lasers

Tensile-strained InGaAs/InGaAsP quantum-well optical amplifiers with a wide spectral gain region at 1.55 mu m

Optical confinement factor dependence of K-factor, differential gain, and nonlinear gain in 1.55- mu m MQW and strained MQW lasers

High-speed operation of strained InGaAs/InGaAsP MQW lasers

Single-quantum-well strained-layer InGaAs-InGaAsP lasers for the wavelength range from 1.43 to 1.55 mu m

Growth and characterization of GSMBE grown strained InGaAs/InGaAsP structures for MQW lasers at 2.0 /spl mu/m

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High-power highly-reliable operation of 0.98-/spl mu/m InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers

Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 mu m InGaAs/InGaAsP MQW and strained-MQW lasers

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