NDLI: Carrier transport in HEMT's analyzed by high-field electroluminescence

Content Provider	IEEE Xplore Digital Library
Author	Zappe, H.P. As, D.J.
Copyright Year	1980
Abstract	The high-field emission of visible light from GaAs and InGaAs high electron mobility transistors (HEMTs) has been used to analyze the hot-electron conduction processes in these devices. Spectral analysis of this electroluminescence has indicated that emission has several components, due to recombination in different layers of the transistor. Analysis of the luminescence provides insights into the vertical distribution of electrons and holes when the transistor is operated at high biases. From the measurements, it seems clear that hot conduction electrons flow both in the conducting channel as well as in the barriers and neighboring quantum wells, and that this dominates the electrical behavior at high drain-source bias voltages.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	590
Ending Page	592
Page Count	3
File Size	331309
File Format	PDF
ISSN	07413106
Volume Number	12
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs MODFETs Gallium arsenide Indium gallium arsenide Spectral analysis Electroluminescence Radiative recombination Spontaneous emission Luminescence Charge carrier processes
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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