NDLI: Some characteristics of the crystalline-amorphous threshold point of /sup 31/P/sup +/ ion-implanted silicon substrates

Content Provider	IEEE Xplore Digital Library
Author	Aharoni, H. Swart, P.L. Lacquet, B.M.
Copyright Year	1963
Abstract	During ion implantation a stage can be reached in which a continuous layer within the implanted crystal changes into amorphous material. The change begins when the implanted dose attains a certain threshold value (D/sub T/). In-situ reflectivity (R) versus dose (D) measurements, made during the implantation of /sup 31/P/sup +/ into Si single crystal substrates showing that both D/sub T/ and the work (W/sub oT/) required to induce the threshold conditions within the implanted crystal increase with the implantation energy are reported. It is also shown that the change in reflectivity Delta R/sub i/, which occurs in the dose range that contains D/sub T/, is a function of E and peaks at 140 keV, the energy at which the damaged layer becomes buried. The ratio D/sub A//D/sub T/ is found to be a decreasing function of E.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	976
Ending Page	978
Page Count	3
File Size	262153
File Format	PDF
ISSN	00189499
Volume Number	38
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystallization Reflectivity Substrates Amorphous materials Silicon Ion implantation Scattering Maintenance engineering Laboratories Africa
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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