NDLI: Current capabilities/needs and future possibilities of multichip modules (MCM's)

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Dislocation scattering in n-type modulation doped Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As/Al/sub 0.3/Ga/sub 0.7/As quantum wells

A GaAs MESFET with a partially depleted p layer for SRAM applications

Enhancement of lithographic patterns by using serif features

Simple model for the hysteretic behavior of thin-film electroluminescent devices

Hot-carrier-induced interface state generation in submicrometer reoxidized nitrided oxide transistors stressed at 77 K

Device physics and technology of complementary silicon MESFET's for VLSI applications

Analytical model for p-channel MOSFETs

Graded-junction gate/n/sup -/ overlapped LDD MOSFET structures for high hot-carrier reliability

On the short-channel theory for MOS transistor

Analytical device model for submicrometer MOSFET's

Contact resistance for small contacts (MOSFET)

Dynamic changes in characteristics of a-Si transistors during fast pulsed operation

The autoresonant peniotron with a quadrupole interaction circuit

Correlation between surface-state density and impact ionization phenomena in GaAs MESFET's

Substrate current measurements in thin SOI MOSFET's at 300 and 77 K

Best structures for deep submicrometer (0.1-0.3 mu m) MOS devices

Conjugated polymers for electronic, optoelectronic, and all optical device application

Current capabilities/needs and future possibilities of multichip modules (MCM's)

High-speed single-quantum-well InGaAs/GaAs laser design and experiment

Status of TFT/LCD flat-panel display

Low-threshold InGaAs/GaAs strained-layer surface emitting lasers with two 45 degrees angle etched total reflection mirrors

Large CW power, very-low-threshold, single transverse mode operation of vertical cavity mushroom structure surface emitting lasers

Strained InGaAs-GaAs quantum-well lasers by impurity-induced disordering with very low threshold and moderate blue-shift

A novel SAL-PINSCH quantum-well laser structure for a pinched beam divergence

Stable CW operation of a MQW laser emitting at 1.54 mu m on a Si substrate at room temperature

Improved ruggedness of a high-current vertical power DMOS

Molecular beam epitaxy grown PbSnTe buried quantum-well diode lasers with PbEuSeTe confinement layers

A new method to enhance mobility of poly-Si TFT recrystallized by excimer laser annealing

The minority-carrier injection-controlled field-effect transistor (MICFET)

Current gain-Early voltage products in graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

Gate-self-aligned n-channel and p-channel germanium MOSFETs

A new device structure and process flow for a low-leakage p-i-n diode-based integrated detector array

SiGe/Si camel-barrier heterojunction internal photoemission LWIR detector

Tri-colorimetric detector in silicon with one photodiode

Low series resistance continuously graded mirror multiple quantum-well vertical-cavity surface-emitting lasers grown by MOCVD

Heterodyne measurement of linewidth, tunability, and frequency synthesis of vertical-cavity surface-emitting laser diode arrays

Optical confinement factor dependence of K-factor, differential gain, and nonlinear gain in 1.55- mu m MQW and strained MQW lasers

Bistability and optical switching in an AlAs-GaAs-InGaAs vertical-cavity surface-emitting laser

Monolithic integration of a photodetector and a vertical-cavity surface-emitting laser

All electrical laser diode characterization by monolithic integration with a photodiode

Three-terminal DOES lasers with exceptionally low threshold currents

Characteristics of InAlAs/InGaAsP quantum-well HEMTs

High-temperature pulsed operation of InGaAsP/InP surface emitting lasers

0.33- mu m millimeter-wave InP-channel HEMTs with high f/sub T/ and f/sub max/

InP-based inverted high electron mobility transistors

Enhancement of mobility in pseudomorphic FETs with up and down monolayers

High-transconductance InGaAs/InAlAs SISFETs

Development of an interactive design environment for heterostructure and quantum-well devices

0.2- mu m gate AlGaAs/GaAs HIGFET (heterostructure insulated gate FET) with a

A vertically integrated GaAs bipolar DRAM cell

Delta-doped SAGM avalanche photodiodes

High-gain resonant InGaAlAs/InGaAs heterojunction bipolar phototransistors grown by molecular beam epitaxy

Dynamic characteristics of photonic gate with multiple-quantum-well reflection modulator and heterojunction phototransistor

GaAs see the light (photodetectors)

High-density, planar Zn-diffused InGaAs/InP photodetector arrays with extended short-wavelength response

Blue-green laser diodes made from II-VI semiconductors

Very-high-performance highly strained Ga/sub 0.23/In/sub 0.77/As channel MODFETs

Long-wavelength (10- mu m) infrared detector using Si/sub 1-x/Ge/sub x//Simultiple quantum wells

Comparison of performance and reliability between MOSFETs with LPCVD gate oxide and thermal gate oxide

Observation of field-induced refractive index variation in quantum box structure

Improved device performance and reliability of n-channel and p-channel MOSFETs with ultrathin gate oxides prepared by conventional furnace oxidation of Si in pure N/sub 2/O ambient

Endurance of MOSFETs with rapid thermally reoxidized nitrided thin gate oxides to hot carrier-induced GIDL

Effectiveness of N/sub 2/O-nitrided gate oxide for high-performance CMOSFETs

Electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N/sub 2/O

Thermal re-emission of trapped hot electrons in NMOS transistors

10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver

Ultra-high speed p-i-n/HBT monolithic OEIC photoreceiver

Ultra-compact monolithic integration of polarization diversity waveguide photodiodes

A 1920*1080 element deformable mirror device for high-definition displays

Planar field-effect coupled quantum wires

Avalanche electron emitter arrays using Si ultra-shallow p-n junctions

Low shot noise in high-speed resonant-tunneling diodes

Effects of substrate tilting in substantial improvement of DC performance of AlGaAs/GaAs n-p-n DHBTs grown by MBE

RF response of high RF-T/sub c/ SNS Josephson microbridges suitable for integrated circuit applications

Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As heterojunction bipolar transistor on

Reduction of low-frequency noise in n-p-n AlGaAs/GaAs HBT's

On the investigation of degradation mechanisms in ultrahigh performance GaAs heterojunction bipolar transistors

36-GHz static digital frequency dividers in AlInAs-GaInAs HBT technology

6-GHz AlInAs/GaInAs/InP DHBT's grown by MOVPE+MBE

ZnSe/GaAs heterostructure bipolar transistors: design and operation of a new II-VI/III-V device structure

Integration of poly buffered LOCOS and gate processing for submicrometer isolation technique

3D simulation of parasitic MOSFET effects for box isolation technologies

Characterization of back-channel subthreshold conduction of walled SOI devices

A novel substrate hot electron and hole injection structure with a double-implanted buried-channel MOSFET

A new method of interface trap modeling in quantized MOSFET inversion layers

Overestimate of thin dielectric lifetime in single doping type poly-gate capacitors

49th Annual Device Research Conference (papers in summary form only received)

200-A/cm/sup 2/ threshold current density 1.5- mu m GaInAs/AlGaInAs strained-layer GRIN-SCH quantum-well laser diodes grown by OMCVD

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Current capabilities/needs and future possibilities of multichip modules (MCM's)

Content Provider	IEEE Xplore Digital Library
Author	Johnson, R.R.
Copyright Year	1963
Abstract	Summary form only given. The state of the art was discussed in terms of costs, densities, speeds, sizes, yields, rework, testing methodologies, and thermal capabilities for the principle production interconnects. Comparisons were made for each of the newer MCM (multichip module) technologies for which data are available. Observations about costs, reworkability, assembly methods, yields, and testing were made to indicate the author's views on where and how costs for MCMs can be driven down to become competitive with existing interconnect systems.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2689
File Size	138950
File Format	PDF
ISSN	00189383
Volume Number	38
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Multichip modules Liquid crystal displays Thin film transistors Dielectric substrates Wiring Costs Thermal management Active matrix technology Delay Silicon compounds
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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