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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Manabe, S. Mastunaga, Y. Furukawa, A. Yano, K. Endo, Y. Miyagawa, R. Iida, Y. Egawa, Y. Shibata, H. Nozaki, H. Sakuma, N. Harada, N. |
| Copyright Year | 1963 |
| Abstract | A highly sensitive 2-million-pixel high-definition charge-coupled device (CCD) image sensor was developed that features an overlaid amorphous silicon photoconversion layer on an interline transfer-type CCD scanner. The device is adapted to the 16:9 aspect ratio. 1125 scanning lines and 2:1 interlace high-definition TV system. A dual-channel horizontal CCD register is used to reduce the operating frequency to one half of the 74.25-MHz readout frequency. A horizontal period signal storage memory (1H line memory) is provided between the vertical CCD register and the horizontal CCD register to provide the signal distribution from the vertical CCD to the horizontal CCD register during the 3.77- mu s short horizontal blanking interval. This device realized a 1000 TV line horizontal limiting resolution 210 nA/1x high sensitivity. Total random noise was found to be 52 electrons RMS and a 72-dB dynamic range was achieved.< |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 1765 |
| Ending Page | 1771 |
| Page Count | 7 |
| File Size | 1190961 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 38 |
| Issue Number | 8 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-08-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Charge-coupled image sensors Amorphous materials Charge coupled devices Registers Frequency Image sensors Amorphous silicon HDTV Blanking TV |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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