NDLI: Diffusion and noise in GaAs material and devices

Content Provider	IEEE Xplore Digital Library
Author	de Murcia, M. Gasquet, D. Elamri, A. Nougier, J.-P. Vanbremeersch, J.
Copyright Year	1963
Abstract	The variation of the diffusion coefficient D(E) versus the electric field strength E is determined at 300 K in n-type GaAs (N/sub D/=3*10/sup -17/ cm/sup -3/), using pulsed high-frequency noise measurements. D(E) is found to increase slightly at low field, then to decrease down to one tenth of its ohmic value near the threshold field. Long (>or=4 mu m) real n/sup +/-n-n/sup +/ Gunn diodes, with an arbitrary doping profile, can be modeled. Comparisons are made, and excellent agreement is found, between experimental and theoretical characteristics of two real diodes, with notch and with gradual doping profiles. The doping profile N/sub D/(x) is shown to have a considerable influence on the diode behavior, in regard to the electric field profile as well as the noise characteristics. Using the impedance field method, the noise current is modeled and found to by very sensitive in the D(E) variation law, in particular in the range of 2.5-4 kV/cm. The agreement between the experimental noise and the computed noise of real diodes is quite satisfactory when using the D(E) determined.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2531
Ending Page	2539
Page Count	9
File Size	911114
File Format	PDF
ISSN	00189383
Volume Number	38
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Doping profiles Semiconductor diodes Gunn devices Semiconductor process modeling Semiconductor device noise Scattering Molecular beam epitaxial growth Neodymium Pulse measurements
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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