NDLI: Optimum base doping profile for minimum base transit time

Content Provider	IEEE Xplore Digital Library
Author	Suzuki, K.
Copyright Year	1963
Abstract	The author investigates the base doping profile which gives the minimum base transit time. The peak base concentration is selected so that the base resistance is the same at any base width for all profiles: box, Gaussian, and exponential. The exponential profile always gives the minimum base transit time at any base width. Thus this profile is the best if there is no other base-concentration-limiting factor, which is the case for heterojunction-bipolar transistors. The shallowest base width was achieved with the box profile, and the base transit time at this base width is smaller than that of other profiles at each profile's allowable base width. Consequently, for homojunction transistors, the optimum base doping profile changes from exponential to Gaussian and from Gaussian to box as the base width decreases. The author also investigated the base transit time of epitaxial base transistors with a 50-nm base width and found that the base transit time increases by a factor of 1.5 when the peak base concentration is located at a depth of 20 nm.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2128
Ending Page	2133
Page Count	6
File Size	564806
File Format	PDF
ISSN	00189383
Volume Number	38
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping profiles Tunneling Photonic band gap Helium Bipolar transistors Heterojunctions Electron mobility Current density Equations
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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