NDLI: Optimization of polysilicon emitters for BiCMOS transistor design

Content Provider	IEEE Xplore Digital Library
Author	Evans, I.R. Morris, N. Mole, P.J. Quinlan, S.C. Jackson, I. Murkin, P.A.
Copyright Year	1963
Abstract	Practical aspects of designing polysilicon emitters for large-scale integrated circuit manufacture are presented. It is shown that by choosing the emitter dose such that the minimum base saturation current density is observed, the highest product of common emitter gain and Early voltage is obtained. In practice, this allows high values of both parameters to be chosen, giving an increased bipolar output impedance. This reduces the need for elaborate Early voltage compensation during BiCMOS circuit design. In addition, the increase in the integrated base charge gives a reduction in the punched base resistance and hence the bipolar noise figure. The increase in the total base charge permits the use of a deeper, wider base region. Therefore, maximizing the product of common emitter gain and Early voltage gives transistors with optimized performance and improved reproducibility.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2343
Ending Page	2349
Page Count	7
File Size	691635
File Format	PDF
ISSN	00189383
Volume Number	37
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Design optimization BiCMOS integrated circuits Voltage Large scale integration Integrated circuit manufacture Current density Impedance Circuit synthesis Noise figure Performance gain
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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