NDLI: A charge-based capacitance model of short-channel MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Chung, S.S.-S.
Copyright Year	1982
Abstract	A quasi-static two-dimensional intrinsic capacitance model for short-channel MOSFETs is discussed. It is derived based in a physically based charge-sharing scheme and implemented using a quasi-static solution of a MOS device simulator. Two-dimensional field-induced mobility degradation, velocity saturation, and short-channel effects are included in the model. The charge conservation rule holds, and channel charge partitioning is properly treated. The simulation results clearly show the importance of two-dimensional field-induced effects to short-channel MOS devices. Comparison of the simulated results with experimentally measured data shows that the model is far more reliable than the analytical one. The method can be used to link a device simulator and a circuit simulator for accurate timing calculation in both digital and analog MOS integrated circuits.<>
Sponsorship	IEEE Council on Electronic Design Automation IEEE Circuits and Systems Society
Starting Page	1
Ending Page	7
Page Count	7
File Size	686904
File Format	PDF
ISSN	02780070
Volume Number	8
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitance MOSFETs Circuit simulation MOS devices Degradation Analytical models Integrated circuit measurements Integrated circuit reliability Timing MOS integrated circuits
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Electrical and Electronic Engineering Software

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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