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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kolawa, E. Flick, W. Nieh, C.W. Molarius, J.M. Nicolet, M.-A. Tandon, J.L. Madok, J.H. So, F.C.T. |
| Copyright Year | 1963 |
| Abstract | An ohmic contact to n-type GaAs of the configuration GaAs/Ni/Ge/W/sub 60/N/sub 40//Au has been investigated. The contacting layer in this metallization is formed by a solid-state reaction between Ni/Ge and GaAs. Backscattering spectrometry and electrical measurements show that the interposed W-N layer acts as an excellent diffusion barrier both in preventing the intermixing of the top Au layer with Ni/Ge and in confining the reaction between Ni/Ge and GaAs. The contact resistivity is in the range of 10/sup -6/ Omega cm/sup 2/ and remains stable after annealing at 500 degrees C for 60 min.< |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 1223 |
| Ending Page | 1225 |
| Page Count | 3 |
| File Size | 304017 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 36 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1989-06-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Gold Ohmic contacts Metallization Solid state circuits Backscatter Spectroscopy Electric variables measurement Conductivity Annealing |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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