NDLI: Finite-element analysis of magnetotransistor action

Content Provider	IEEE Xplore Digital Library
Author	Guvenc, M.G.
Copyright Year	1963
Abstract	Most of the semiconductor device geometries that are being experimented with for improved magnetic field sensing do not lend themselves to accurate analytical modeling. The vectorial interaction taking place between the electrical current and the magnetic field complicates the problem of solving nonlinearly coupled carried density and electrostatic potential equations. In this work, solutions to the carrier density and electrostatic potential distributions are obtained by using a finite-element technique for a structure representing lateral and vertical bipolar transistors with multiple collectors. The results presented show the effect of the magnetic field to be very nonuniformly distributed around the emitter with a heavy-concentration near the emitter edges where the Lorentz-force-driven carriers are stopped at the insulating boundaries and give rise to a magnetoconcentration in the carrier densities. Distribution of currents collected by a multitude of collectors surrounding the emitter and their sensitivity to the magnetic field are given. The vertical magnetosensitivities are found to be an order of magnitude smaller than the lateral magnetosensitivity because of the lack of such a magnetoconcentration of carriers under the emitter. The computer program developed can simulate unipolar as well as bipolar magneto-sensitive devices with any boundary geometry.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1851
Ending Page	1860
Page Count	10
File Size	1022055
File Format	PDF
ISSN	00189383
Volume Number	35
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Finite element methods Magnetic analysis Magnetic fields Solid modeling Electrostatics Charge carrier density Magnetic semiconductors Semiconductor devices Geometry Analytical models
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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