NDLI: MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substrates

Content Provider	IEEE Xplore Digital Library
Author	Oishi, M. Nakao, M. Itaya, Y. Sato, K. Imamura, Y.
Copyright Year	1965
Abstract	A single-step low-pressure metalorganic vapor phase epitaxy (MOVPE) was applied to the fabrication of 1.5 μm InGaAsP/InP distributed feedback laser diodes on corrugated InP substrates, accompanied by LPE for buried heterostructure formation. High probability of single longitudinal mode operation was obtained due to the uniformity of the active layer thickness. A typical threshold current was 35 mA with both facets cleaved. A maximum output power of up to 27 mW was also obtained under single longitudinal mode operation with anti-reflective/cleaved facet configuration. The laser diode had high spectral stability under high-frequency direct modulation of 1.4 GHz. Results of initial aging tests (APC of 5 mW at 25°C for longer than 3800 h) have shown no degradation in driving currents. It is found that low-pressure MOVPE is favorable for epitaxial growth on corrugated substrates.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	822
Ending Page	827
Page Count	6
File Size	2249775
File Format	PDF
ISSN	00189197
Volume Number	23
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Distributed feedback devices Laser feedback Indium phosphide Epitaxial growth Substrates Epitaxial layers Diode lasers Laser modes Optical device fabrication Threshold current
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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