NDLI: Correlation of Particle-Induced Displacement Damage in Silicon

Content Provider	IEEE Xplore Digital Library
Author	Summers, G. P. Burke, E. A. Dale, C. J. Wolicki, E. A. Marshall, P. W. Gehlhausen, M. A.
Copyright Year	1963
Abstract	Correlation is made between the effects of displacement damage caused in several types of silicon bipolar transistors by protons, deuterons, helium ions, and by 1 MeV equivalent neutrons. These measurements are compared to calculations of the nonionizing energy deposition in silicon as a function of particle type and energy. Measurements were made of displacement damage factors for 2N2222A and 2N2907A switching transistors, and for 2N3055, 2N6678, and 2N6547 power transistors, as a function of collector current using 3.7 - 175 MeV protons, 4.3 - 37 MeV deuterons, and 16.8 - 65 MeV helium ions. Long term ionization effects on the value of the displacement damage factors were taken into account. In calculating the energy dependence of the nonionizing energy deposition, Rutherford, nuclear elastic, and nuclear inelastic interactions, and Lindhard energy partition were considered. The main conclusions of the work are as follows: 1) The ratio of the displacement damage factors for a given charged particle to the 1 MeV equivalent neutron damage factor, as a function of energy, falls on a common curve which is independent of collector current. 2) Deuterons of a given energy are about twice as damaging as protons and helium ions are about eighteen times as damaging as protons.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1133
Ending Page	1139
Page Count	7
File Size	1568542
File Format	PDF
ISSN	00189499
Volume Number	34
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Protons Neutrons Bipolar transistors Energy measurement Particle measurements Current measurement Power measurement Displacement measurement
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Ionization and Displacement Damage in Silicon Transistors

Enhanced displacement damage effectiveness in irradiated silicon devices

Proton, neutron and electron-induced displacement damage in germanium

Synergistic Radiation Effects on PNP Transistors Caused by Protons and Electrons

Correlation of Particle-Induced Displacement Damage in Silicon

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