NDLI: Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor deposition

Content Provider	IEEE Xplore Digital Library
Author	Isshiki, K. Kaneno, N. Kumabe, H. Namizaki, H. Ikeda, K. Susaki, W.
Copyright Year	1983
Abstract	For over 10 000 h, crank transverse-junction-stripe (TJS) laser diodes, grown by metal-organic chemical vapor deposition (MOCVD) maintain low and quite stable operating currents in the automatic-power-control aging with output power of 5 mW/facet at 55°C and 70°C. These MO-CVD lasers have excellent initial characteristics and small distributions of the characteristics. The reason for this excellent result is discussed in relation to the crystalline quality and the uniform growth of MO-CVD wafers.
Sponsorship	IEEE Lasers and Electro-Optics Society Optical Society of America
Starting Page	1475
Ending Page	1481
Page Count	7
File Size	1234155
File Format	PDF
ISSN	07338724
Volume Number	4
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1986-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Chemical lasers Chemical vapor deposition Gallium arsenide Substrates Surface morphology Diode lasers Epitaxial growth Temperature Aging Power generation
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics

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Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor deposition