NDLI: Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits

Content Provider	IEEE Xplore Digital Library
Author	Choong H. Hyun Shur, M.S. Cirillo, N.C.
Copyright Year	1982
Abstract	A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. Comparison of our simulator results with the measured data show good agreement for both dc and transient responses. We also propose a set of analytically derived design guidelines for MODFET inverter stages. Design parameters such as the optimum ratio of driver to load saturation currents, noise margins and switching delays can be readily related to the device process parameters. Our simulation results indicate that the inverter speed increases with increasing driver threshold voltages but there is an optimum threshold voltage, of approximately 0.4 V for our devices, which provide the highest noise margin.
Sponsorship	IEEE Council on Electronic Design Automation IEEE Circuits and Systems Society
Starting Page	284
Ending Page	292
Page Count	9
File Size	1207172
File Format	PDF
ISSN	02780070
Volume Number	5
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1986-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Analytical models Circuit simulation Gallium arsenide MODFET integrated circuits HEMTs Inverters Threshold voltage Integrated circuit modeling SPICE Velocity control
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Electrical and Electronic Engineering Software

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