NDLI: Wide-gap II-VI superlattices

Content Provider	IEEE Xplore Digital Library
Author	Kolodziejski, L. Gunshor, R. Otsuka, N. Datta, S. Becker, W. Nurmikko, A.
Copyright Year	1965
Abstract	At this time, there is evident a sharp increase of interest in the II-VI class of semiconducting compounds largely due to recent success in the growth of these materials by molecular beam epitaxy (MBE). One of the more important areas for application of high-quality II-VI films is infrared imaging where CdTe deposited by MBE onto GaAs substrates is proposed as the substrate for subsequent HgCdTe and HgTe/CdTe superlattice deposition. Moreover, interest in the wide-gap II-VI compounds is stimulated by the need for electronically addressable flat panel display devices, and for the development of wide-gap (blue) LED and injection laser devices. For applications in the blue portion of the visible spectrum, ZnSe and ZnS have long been favored candidates. Very high quality ZnSe has recently been grown by MBE. The photoluminescence spectra of the MBE-grown ZnSe samples grown at Purdue University and elsewhere strongly suggests that, in many cases, the film quality exceeds that obtainable in bulk form. In addition to the Conventional II-VI materials, a new class of materials called diluted magnetic semiconductors (DMS) are currently receiving considerable attention. DMS are II-VI semiconductors such as CdTe or ZnSe with a fraction of the group II element substituted by a magnetic transition element such as Mn. The incorporation of Mn leads to very large magnetooptic effects, on the Order of several hundred times that exhibited by conventional semiconductors of a comparable bandgap. An especially significant feature of II-VI DMS materials is the increase in bandgap resulting from Mn incorporation. The band-gap increases with Mn mole fraction in a manner similar to the effect of Al in the (Ga, Al)As system, and with similar implications to the creation of quantum well structures and superlattices. The first part of this paper reviews our recent work involving quantum well structures in the (Zn, Mn)Se system, with the second part emphasizing (Cd, Mn)Te. Included in the discussion of superlattice structures in (Cd, Mn)Te is a description of recent results concerning the heteroepitaxial growth of CdTe on GaAs-materials having a lattice constant mismatch of 14.6 percent.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1666
Ending Page	1676
Page Count	11
File Size	4463058
File Format	PDF
ISSN	00189197
Volume Number	22
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1986-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Molecular beam epitaxial growth Zinc compounds Magnetic materials II-VI semiconductor materials Photonic band gap Semiconductor films Substrates Magnetic semiconductors Semiconductor superlattices Semiconductivity
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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