NDLI: Gate-voltage-dependent transport measurements on heterostructure field-effect transistors

Content Provider	IEEE Xplore Digital Library
Author	Prost, W. Brockerhoff, W. Heime, K. Ploog, K. Schlapp, W. Weimann, G. Morkoc, H.
Copyright Year	1963
Abstract	Heterostructure field-effect transistors (HFET's) with a quasi-two-dimensional electron gas as a channel need further optimization with respect to transport properties such as mobility, velocity, and carrier concentration and confinement. For the control of optimization procedures, analytical test methods are required. One suitable method is described here. It is an extension of the magnetotran-sconductance mobility measurement method [9] and allows a detailed analysis of transconductance, mobility, and sheet carrier concentration in the quasi-two-dimensional channel as a function of gate bias. The theory is described and experimental results on double (quantum well) heterojunction FET's are given. The assumption that parallel Conduction in HFET's at 77 K and at room temperature has different reasons [1], [2] will be proved experimentally. The great advantage of this method is its applicability to fully processed short-channel devices; its limitation is the restriction to the low-field constant-mobility regime.
Sponsorship	IEEE Electron Devices Society
Starting Page	646
Ending Page	650
Page Count	5
File Size	711404
File Format	PDF
ISSN	00189383
Volume Number	33
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1986-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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