NDLI: A dynamic RAM Cell in recrystallized polysilicon

Content Provider	IEEE Xplore Digital Library
Author	Jolly, R.D. Kamins, T.I. McCharles, R.H.
Copyright Year	1980
Abstract	A new, one-transistor, dynamic RAM cell has been fabricated in beam-recrystallized polysilicon. Placing thin oxides both above and below the storage region doubles the storage capacitance. Complete isolation of the storage region by oxides also reduces the susceptibility of the cell to soft errors from collection of charge injected into the substrate by the surrounding elements or by alpha particles. Long storage times are feasible, being limited only by the leakage of the access transistor. A thick oxide under the bit line reduces the bit-line capacitance, further increasing the ratio of storage capacitance to bit-line capacitance.
Sponsorship	IEEE Electron Devices Society
Starting Page	8
Ending Page	11
Page Count	4
File Size	446992
File Format	PDF
ISSN	07413106
Volume Number	4
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	DRAM chips Substrates Capacitance Circuits Alpha particles Signal generators Read-write memory Silicon Laboratories
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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A dynamic RAM Cell in recrystallized polysilicon