NDLI: GaAs Analog to Digital Converter and Memory IC's for Ultra High Speed Transient Recording

Content Provider	IEEE Xplore Digital Library
Author	Eden, Richard C.
Copyright Year	1963
Abstract	The excellent electron dynamical properties of gallium arsenide enable GaAs devices to achieve high speed performance levels many times those of corresponding silicon devices. These device performance advantages carry over into integrated circuit technologies as well, aided significantly by the fact that GaAs substrate material is available in semi-insulating (>108¿cm) form for very low parasitics in monolithic integrated circuits. This has led to the achievement of logic delays as low as 12.8ps at 77°K or 16.8ps at 300°K in the more exotic GaAs IC approaches. In the standard 1¿m gate length, planar MESFET GaAs circuits, ring oscillator delays of ¿d=52ps at PD=1mw/gate have been demonstrated, increasing to ¿d=70ps at PD=2mw/gate in MSI flip flop circuits (standard ftoggle=1/5¿d type-D flip flops toggle up to nearly 3 GHz). The planar ion implanted GaAs MESFET circuits have been fabricated in circuit complexities up to 1008 logic gates, with NOR gate delays as low as 150ps obtained in these LSI chips (e.g., a 35¿d multiply time of 5.25ns in 8×8 bit latched parallel multiplier circuits). These 1¿m gate length MESFET circuits have been fabricated on up to 3¿ diameter GaAs wafers using the same type of DSW optical lithography used for silicon VLSI, which is considered ample evidence that this GaAs IC technology can be cost-effective and is ready for commercialization. This paper focuses on the application of this MESFET GaAs IC technology for the types of digital memory and analog to digital converter circuits required to implement ultra high speed transient recorders.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	283
Ending Page	288
Page Count	6
File Size	1045876
File Format	PDF
ISSN	00189499
Volume Number	30
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Analog-digital conversion Analog integrated circuits High speed integrated circuits Digital integrated circuits Digital recording MESFET circuits Delay MESFET integrated circuits Electrons
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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