NDLI: Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon

Content Provider	IEEE Xplore Digital Library
Author	Masetti, G. Severi, M. Solmi, S.
Copyright Year	1963
Abstract	New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 10¹⁹cm^-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As-and in P-doped silicon. Finally, it is shown that these new expressions, once implemented in the SUPREM II process simulator, lead to reduced errors in the simulation of the sheet resistance values.
Sponsorship	IEEE Electron Devices Society
Starting Page	764
Ending Page	769
Page Count	6
File Size	636831
File Format	PDF
ISSN	00189383
Volume Number	30
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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