NDLI: On-chip capacitance measurement circuits in VSLI structures

Please wait, while we are loading the content...

Year : 2016 Volume : 63

Year : 2015 Volume : 62

Year : 2014 Volume : 61

Year : 2013 Volume : 60

Year : 2012 Volume : 59

Year : 2011 Volume : 58

Year : 2010 Volume : 57

Year : 2009 Volume : 56

Year : 2008 Volume : 55

Year : 2007 Volume : 54

Year : 2006 Volume : 53

Year : 2005 Volume : 52

Year : 2004 Volume : 51

Year : 2003 Volume : 50

Year : 2002 Volume : 49

Year : 2001 Volume : 48

Year : 2000 Volume : 47

Year : 1999 Volume : 46

Year : 1998 Volume : 45

Year : 1997 Volume : 44

Year : 1996 Volume : 43

Year : 1995 Volume : 42

Year : 1994 Volume : 41

Year : 1993 Volume : 40

Year : 1992 Volume : 39

Year : 1991 Volume : 38

Year : 1990 Volume : 37

Year : 1989 Volume : 36

Year : 1988 Volume : 35

Year : 1987 Volume : 34

Year : 1986 Volume : 33

Year : 1985 Volume : 32

Year : 1984 Volume : 31

Year : 1983 Volume : 30

Year : 1982 Volume : 29

Changes in the editorial board

GaAs digital IC for FM demodulator

MOSFET's on Au-diffused high-resistivity Si substrates

A new method for experimental determination of the series resistance of a solar cell

A p-i-n heterojunction model for the thin-film CuInSe2/CdS solar cell

Subthreshold current of dual-gate MOSFET's

Gate formation in GaAs MESFET's using ion-beam etching technology

Two-dimensional model of a thyristor turn-on channel

A CMOS/SOS gate array with a new customization technique of cutting

TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's

Gate-drain avalanche breakdown in GaAs power MESFET's

Turn-on phenomena in optically and electrically fired thyristors

High-voltage junction-gate field-effect transistor with recessed gates

Effect of self-sharpening in low-velocity electron-beam scanning

Breakover phenomena in field-controlled thyristors

Barrier lowering in short-channel CCD's

A comparative study of CMOS processes for VLSI applications

Phonon-assisted carrier transport across a grain boundary

Analysis and capacitive measurement of the built-in-field parameter in highly doped emitters

The reliability of silicon avalanche photodiodes for use in optical-fiber transmission systems

Transient analysis of two semiconductor devices under circuit-loaded operation conditions

On-chip capacitance measurement circuits in VSLI structures

Thin film ZnS:Mn AC-electroluminescent device with a Ge layer

Hot-electron limited operating voltages for 0.8-µm MOSFET's

Noise in GaAs FET's with a nonuniform channel thickness

Minority current in the base region of bipolar transistors under high-level injection conditions

Bipolar area-image sensor

Improved orotron performance in the 50- to 75-GHz frequency region

I-V characteristics of MESFET's with nonuniform carrier distribution

Thin-film transistors on a-Si:H

An amorphous silicon integrated inverter

I-2 new device phenomena based on multiple layer epitaxy

I-1 The first 40 years: Reminiscences of some of DRC's significant events

IIA-1 generalized scaling theory and its application to a 1/4 micron mosfet design

I-4 submicron VLSI

I-3 ring oscillators, picoseconds and applications -a shopping guide for digital technology

IIA-3 experimental electrical characteristics of submicrometer MOSFETs

IIA-5 a JMOS transistor fabricated with 100A low pressure nitrided-oxide gate dielectric

IIA-6 a comparison of buried channel and surface channel MOSFETs for VLSI

IIA-8 ultra-thin gate oxide characteristics and MOSFET scaling implications

IIA-9 1/2 µm Si MESFET logic devices

IIB-1 a high quantum efficiency backside illuminated AlGaAs/GaAs imaging CCD

IIA-10 submicron-length tungsten gate self-aligned GaAs MESFET (late paper)

IIB-3 new interdigitated pn junction device with novel capacitance-voltage characteristic and ultrahigh optical sensitivity

IIB-4 high responsivity homojunction GaAs triangular barrier photodiode

IIB-6 picosecond bias-free photodetectors

IIB-7 high-current and high-gain InGaAsP/InP heterojunction phototransistors and monolithic functional optical-devices

IIB-8 influence of misfit dislocations on 1.3 µm InP/InGaAsP avalanche photodiode

IIB-9 multiplication noise in

IIIA-1 terraced heterostructure large-optical-cavity AlGaAs lasers for single-mode CW operation high output power levels

IIB-11 photoconductive gain in high-speed InP:Fe photoconductors

IIIA-2 high performance single mode modified channel substrate planar laser diodes

IIIA-4 coupled multiple stripe quantum well injection lasers grown by MOCVD

IIIA-5 low threshold, high efficiency Ga1-xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition

IIIA-6 GaAlAs/GaAs MOCVD selective epitaxy for monolithic optical device integration with comples GaAs IC's

IIIA-8 buried heterostructure GaInAsP/InP lasers fabricated using thermally transported InP

IIIA-10 microlensed superluminescent stripe geometry GaInAsP/InP 1.3µm ELEDs for multi-mode fibre communications

IIIA-11 all-optical bistable operation in semiconductor lasers

IIIB-1 two-dimensional modeling of local oxidation

IIIB-3 verification of models for the annealing of arsenic implants

IIIB-5 high voltage electron beam lithography for VLSI fabrication

IIIB-6 high performance bipolar transistors in a CMOS process

IIIB-9 polycrystalline silicon intermediate layers for hermetic seal technology

IIIB-8 gigaohm-range polycrystalline silicon load elements for a CMOS 16K static RAM

IVA-1 single-crystal silicon TFTs on bulk glass

IVA-2 dual-gate a-Si:H thin-film transistors on bulk glass

IVA-3 26×26 matrix addressed guest-host liquid crystal display with Schottky contact amorphous hydrogenated silicon FETs

IVA-5 the transpacitor, a novel three-terminal MOS-capacitor switching device

IVA-7 iridium silicide Schottky infrared photodiodes

IVA-6 a silicon phototransistor with tunnel junction emitter

IVA-8 power MOSFET integral diode reverse recovery tailoring using electron irradiation

IVA-9 ambimodal DMOS devices

IVB-1 GaAs MESFETs with a partially p type drain

IVB-3 a submicron self-aligned GaAs MESFET technology for digital integrated circuits

IVB-4 resistor coupled Josephson logice (RCJL)

IVB-6 device aspects of n-i-p-i doping superlattices

IVB-8 strained-layer superlattices: A new class of electronic materials for use in photodetectors

IVB-10 engineered Al - GaAs Schottky barrier heights by MBE

IVB-9 heterojunction materials and device technology for high-temperature electronic applications

IVB-12 novel ohmic contacts to n-type GaAs

VA-1 simple physical models for bulk and surface electron velocities in silicon

VA-2 a computationally efficient short channel MOSFET current model for VLSI circuit simulation

VA-4 charge components of the MOS transistor and their importance for transient simulations

VA-5 a new approach to modeling ion implanted channels in MOSFETs and application to sensitivity analysis

VA-6 two-dimensional simulation of latch-up in CMOS structure

VA-8 simple plasma wire model of charge funneling

VB-1 an N-channel In0.53Ga0.47As plasma oxide insulated gate inversion-mode fet

VB-4 insulated gate field effect transistors with the conduction channel placed at semiconductor-semiconductor interfaces

VB-3 In0.47Ga0.53As FETs with insulator-assisted Schottky gates

VB-5 camel diode gate GaAs and GaAs/AlxGa1-xAs modulation doped FETs

VB-9 Monte Carlo simulation of a submicron-sized GaAs n⁺-i(n)-n⁺diode

VB-7 the modulation doped GaInAs/AlInAs MESFET

VB-11 InP annealing studies

VIA-1 effects of hot-carrier trapping in n- and p-channel MOSFETs

VIA-4 avalanche-induced breakdown mechanisms in short-channel MOSFETs

VIA-3 measurement of interface trapped charge in short-channel MOSFETs

VIA-5 hot-electron induced excess carriers in n-channel MOSFETs

VIA-7 submission for the device research conference march 3, 1982, improved models for predicting the gain of bipolar structures in silicon

VIA-9 Auger recombination study in silicon using a tunneling technique

VIA-10 technology and performance of SIPOS heterojunction emitters

VIB-1 (Ga,Al)As/GaAs heterojunction bipolar transistors: Design considerations and experimental results

VIB-2 lateral pnp GaAs bipolar transistor with minimized substrate currents

VIB-3 permeable base transistor - A new technology

VIB-5 millimeter-wavelength GaAs permeable base transistors

VIB-6 a real space transfer electron device (RSTED) heterostructure oscillator

VIB-7 GaAs high power X-band vertical MESFET

VIB-8 GaAs subharmonically-pumped, planar doped barrier mixer diodes

VIB-9 high energy injection and transient electron transport in gallium arsenide

Year : 1981 Volume : 28

Year : 1980 Volume : 27

Year : 1979 Volume : 26

Year : 1978 Volume : 25

Year : 1977 Volume : 24

Year : 1976 Volume : 23

Year : 1975 Volume : 22

Year : 1974 Volume : 21

Year : 1973 Volume : 20

Year : 1972 Volume : 19

Year : 1971 Volume : 18

Year : 1970 Volume : 17

Year : 1969 Volume : 16

Year : 1968 Volume : 15

Year : 1967 Volume : 14

Year : 1966 Volume : ED-13

Year : 1965 Volume : 12

Year : 1964 Volume : 11

Year : 1963 Volume : 10

On-chip capacitance measurement circuits in VSLI structures

Content Provider	IEEE Xplore Digital Library
Author	Iwai, H. Kohyama, S.
Copyright Year	1963
Abstract	A precise capacitance measurement technique is described. This technique is based on a principle of capacitively divided ac voltage measurement. Details of the measurement procedure and test pattern configuration is also discussed. Utilizing the technique, precise capacitance measurements were carried out, which were practically difficult with direct measurements, and size effects of the small geometry capacitances were measured and evaluated. The technique was found to be practical and accurate, and besides, the test device can be integrated on an LSI chip, thus it appears to be very effective in VLSI development.
Sponsorship	IEEE Electron Devices Society
Starting Page	1622
Ending Page	1626
Page Count	5
File Size	659104
File Format	PDF
ISSN	00189383
Volume Number	29
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1982-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Central Library (ISO-9001:2015 Certified)
Indian Institute of Technology Kharagpur
Kharagpur, West Bengal, India | PIN - 721302

See location in the Map
03222 282435
Mail: support@ndl.gov.in

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in