NDLI: Spontaneous emission behavior in AlGaAs TJS lasers

Content Provider	IEEE Xplore Digital Library
Author	Namizaki, H. Kumabe, H. Susaki, W.
Copyright Year	1965
Abstract	Spontaneous emission in the direction perpendicular to the lasing direction is experimentally examined in AlGaAs TJS lasers which lase in the fundamental transverse and single longitudinal mode. It is found that the spontaneous emission intensity uniformly saturates above threshold, spatially as well as spectrally. Spontaneous emission peak energy is compared to the lasing energy in a series of lasers with a different Al content in the active region. The energy difference between two energies is shown to be 50 meV and to be independent of the Al content from 0 to 0.26. The absorption coefficient in the active region is calculated from the spontaneous emission spectral shape, which is reasonably explained with the doping condition of the TJS lasers.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	799
Ending Page	803
Page Count	5
File Size	1813767
File Format	PDF
ISSN	00189197
Volume Number	17
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spontaneous emission Laser modes Spectral shape Semiconductor lasers Waveguide lasers Gallium arsenide Absorption Semiconductor device doping Mirrors Indium phosphide
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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