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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wood, Susan Doyle, N. J. Spitznagel, J. A. Choyke, W. J. More, R. M. McGruer, J. N. Irwin, R. B. |
| Copyright Year | 1963 |
| Abstract | A combined theoretical and experimental study of primary recoil spectra effects or radiation damage in silicon is presented. Calculations determined how the damage energy is partitioned into free defects and cascades by fast collisions. The theory also showed that on a time scale ~10-14 sec. a very weak mass dependence of the lattice damage is to be expected. Channeling experiments were then performed on <111> single crystal silicon implanted with 1.0 MeV 20Ne, 0.5 MeV 4He and 75 keV 1H. Energies and fluences of the ions were matched such that over the first 0.3 ¿m the damage energy deposited and the rate of energy deposition were the same for all species. The experimental data were analyzed assuming that equivalent primary damage states will evolve into statistically equivalent final damage states at high fluences. They confirm that the final damage is essentially independent of the mass of the bombarding ion. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD |
| Starting Page | 4107 |
| Ending Page | 4112 |
| Page Count | 6 |
| File Size | 1253046 |
| File Format | |
| ISSN | 00189499 |
| Volume Number | 28 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1981-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Solid modeling Atomic measurements Silicon Neutrons Research and development Ion beams Atomic beams Atomic layer deposition Energy measurement Backscatter |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering |
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