NDLI: A low-cost microprocessor-based Deep-Level Transient Spectroscopy (DLTS) system

Content Provider	IEEE Xplore Digital Library
Author	Sexton, F.W. Brown, W.D.
Copyright Year	1963
Abstract	A microcomputer-based DLTS system is presented, in which the microcomputer functions as a signal averager and controller. The system can detect traps deeper than 0.20 eV from the band edges and 10³ cm^-3 less dense than the intentional dopant concentration. The system was applied to the study of deep traps in liquid-phase epitaxy (LPE) grown GaAs and vapor-phase epitaxy (VPE) grown GaAs_0.75P_0.25 light-emitting diodes (LEDs). A deep donor level at E_c -0.70 eV and σ_n=1.3×10^-15 cm² was found in the latter which agreed with capacitance-transients experiments done by another investigator. The electric-field strength was seen to inversely affect the electron capture cross section of this level. A minority-carrier trap reported at E_v+0.15 eV was observed but its energy level was not resolved due to its broad DLTS spectrum peak. The GaAs LED exhibited emission from a deep acceptor level at E_ν+0.81 eV and σ_p=2.2×10^-15 cm², σ_n=6.8×10^-22, and a deep donor level which could not be resolved.
Sponsorship	IEEE Instrumentation and Measurement Society Bureau international des poids et mesures IEEE International Bureau of Weights and Measures (BIPM) URSI NBS Agency Ind. Sci. & Technol., Min. Int. Trade & Ind. Sci. Council Japan International Union of Pure and Applied Physics (IUPAP) NIST NRCC National Conference of Standards Laboratories (NCSL) Allen Osborne Associates Andeen-Hagerling, Inc. Ballantine Lab. Inc. Clarke-Hess Communications Research Corp. Fluke Corporation Guildline Instruments Hewlett-Packard Co. Julie Res. Lab. Inc. Keithley Instruments, Inc. Measurements International Ltd. Canada QuadTech Inc. Quantum Design Inc. Rotek Instrum. Corp. Tegam Inc. Tektronix Inc
Starting Page	186
Ending Page	193
Page Count	8
File Size	1436200
File Format	PDF
ISSN	00189456
Volume Number	IM-30
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitance Temperature measurement Transient analysis Microcomputers Junctions Bridge circuits Gallium arsenide
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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