NDLI: Optimization of potential profiles in junction charge-coupled devices

Content Provider	IEEE Xplore Digital Library
Author	Wolsheimer, E.A.
Copyright Year	1963
Abstract	Experimental results have shown that the junction charge-coupled device (JCCD) can compete with other types of CCD's in several applications, providing the channel potential can be made sufficiently smooth. Although devices have been fabricated with a charge-transfer intefficiency of 2 × 10^-s, the reproducibility was not satisfactory. Two new processes are described for fabricating JCCD's. By solving the two-dimensional Poisson equation numerically the parameters for the two processes are optimized. Computations for solving the lateral confinement problem of the JCCD have been made. A noncritical methtod is described to define the lateral boundaries of the channel. By simulating complete JCCD cells the influence of gate voltages and charge carriers in the channel was investigated. MOS effects caused by the aluminum interconnection layer on top of the devices also have been taken into account. The accuracy of the simulation method is demonstrated by comparing the results with both a one-dimensional simulation and another two-dimensional simulation which requires more computational effort. Based on the results of the computations JCCD's will be fabricated. Experiments will be carded out in order to verify the anticipated properties.
Sponsorship	IEEE Electron Devices Society
Starting Page	811
Ending Page	817
Page Count	7
File Size	752830
File Format	PDF
ISSN	00189383
Volume Number	28
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Calculation of potential profiles in the junction charge-coupled device

Experimental results on junction charge-coupled devices

Surface potential equilibration method of setting charge in charge-coupled devices

Vertical charge transport and charge-handling capability in junction charge-coupled devices

Free charge transfer in charge-coupled devices

Charge handling capacity in charge coupled devices

Noise measurements in charge-coupled devices

Interlacing in charge-coupled imaging devices

The inception of charge-coupled devices

Optimization of potential profiles in junction charge-coupled devices

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Calculation of potential profiles in the junction charge-coupled device

Experimental results on junction charge-coupled devices

Surface potential equilibration method of setting charge in charge-coupled devices

Vertical charge transport and charge-handling capability in junction charge-coupled devices

Free charge transfer in charge-coupled devices

Charge handling capacity in charge coupled devices

Noise measurements in charge-coupled devices

Interlacing in charge-coupled imaging devices

The inception of charge-coupled devices

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