NDLI: The effect of base doping on the performance of Si bipolar transistors at low temperatures

Content Provider	IEEE Xplore Digital Library
Author	Dumke, W.P.
Copyright Year	1963
Abstract	The possibility of using Si bipolar transistors at low temperatures (77 to 200 K) is examined. Estimates of the de-current gain β and the switching performance are obtained from results on the variation of the effective band gap with the concentration of impurities in the emitter region and from the variation of the transport properties with the impurity concentration in the base. The reduction in β at low temperatures cannot be eliminated by using an optimum As concentration in transistors with As doped emitters. There is, however, a significant improvement in the low-temperature from eliminating the compensating acceptors from the emitter region. It is important to also reduce the number of compensating donor traps from the base region at low temperatures. The effect of varying the base doping is calculated using the data on Si of Morin and Maita, replotted to obtain the dependence on impurity concentration. The switching speed goes through a maximum close to 150 K. At even lower temperatures majority-carrier freeze out is responsible for a decreased performance. At low temperatures, the de-current gain can be increased by reducing the base doping. The resulting performance decrease is less than at room temperature and the improvement in β is greater, because, at low temperatures, the decreased impurity scattering at a lighter doping significantly improves the electron and hole mobilities in the base region.
Sponsorship	IEEE Electron Devices Society
Starting Page	494
Ending Page	500
Page Count	7
File Size	749057
File Format	PDF
ISSN	00189383
Volume Number	28
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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