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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Swartz, G.A. Wern, D.W. Robinson, P.H. |
| Copyright Year | 1963 |
| Abstract | An electronically tunable, high-power, UHF (225-400-MHz) bandpass filter which utilizes large-area, high-capacitance varactor diodes has been designed and tested. The varactor diodes with 100-V breakdown potential, uniform impurity density in the active layer and 400-pF capacitance at -8-V bias are used as the tuning elements of the filter. The diodes are fabricated from epitaxial layers grown on high-conductivity silicon substrates. The epitaxial layers include an n+transition layer between the substrate and n-type active layer to minimize the growth defects in the n layer which reduce the breakdown potential to a fraction of the theoretical value. Measurements in a test cavity at 151 MHz indicate a diode Q of 190 at -8-V bias. Input power levels of 1-5 W can be accommodated across the tuning range. Insertion loss varies from 4 to 7 dB and intermodulation products are suppressed 30 dB or more for two input tones of 1 W each. This filter exhibits an order-of-magnitude improvement in power-handling capability over present state-of-the-art filters. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 2146 |
| Ending Page | 2151 |
| Page Count | 6 |
| File Size | 853861 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 27 |
| Issue Number | 11 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1980-11-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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