NDLI: Performance of n<sup>+</sup>-p silicon solar cells in concentrated sunlight

Content Provider	IEEE Xplore Digital Library
Author	Burgess, E.L. Fossum, J.G.
Copyright Year	1963
Abstract	Performance data for n⁺-p silicon solar cells operating at illuminations up to 90 suns (9 W/cm²) and temperatures up to 100°C are presented. Experimental results for 2-cm²cells with different base resistivities are compared to performances predicted by a numerical device analysis computer code. Excellent agreement between numerical simulation and experiment is observed. For the illumination levels considered, an optimum base resistivity of approximately 0.3 Ω. cm is predicted by the numerical analyses and verified experimentally. The 0.3-Ω. cm cells exhibit conversion efficiencies above 11.8 percent up to 90 suns with a peak efficiency of 14 percent at approximately 30 suns. Preliminary results for a large-area (15.2 cm²) circular cell design are also presented for illuminations up to 60 suns. A peak conversion efficiency of 13.5 percent is measured for this cell at ∼25 suns.
Sponsorship	IEEE Electron Devices Society
Starting Page	433
Ending Page	438
Page Count	6
File Size	916035
File Format	PDF
ISSN	00189383
Volume Number	24
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1977-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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