NDLI: Photosensitive pulse oscillator

Content Provider	IEEE Xplore Digital Library
Author	Abe, T. Kakite, K.
Copyright Year	1963
Abstract	A new type of semiconductor photosensitive device has been developed, differing from photodetectors used hitherto in the characteristics and the operation mechanism of the device. In the present device, stable oscillation is observed in the (n⁺-p⁺- n-n⁺)-p⁺structure of silicon in the applied voltage range, two ∼ several hundred volts, with illumination above a threshold light intensity. The oscillation frequency increases linearly with the light intensity. For instance, with variation of light intensity 0.1 mW, the frequency changes by 3.6 kHz for the applied voltage of 30 V. With increasing applied voltage, the threshold light intensity and the oscillation frequency decrease. The frequency is expressed byA(L - 0.05)V_{a}^{-0.64}which agrees well with the experimental results. With rising temperature, the frequency varies little though the threshold light intensity decreases. The large output peak power of oscillation (12.5 W at 100 V) is obtained. In this paper, the fundamental characteristics and the operation mechanism of the device are presented.
Sponsorship	IEEE Electron Devices Society
Starting Page	177
Ending Page	182
Page Count	6
File Size	691599
File Format	PDF
ISSN	00189383
Volume Number	24
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1977-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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