NDLI: Microcharacterization of electroluminescent diodes with the scanning electron microscope (SEM)

Content Provider	IEEE Xplore Digital Library
Author	Balk, L.J. Kubalek, E. Menzel, E.
Copyright Year	1963
Abstract	A complete material characterization of electroluminescent diodes necessarily requires a high spatial resolution because of the micron-sized thickness of the different epitaxial layers. A modified arrangement of a scanning electron microscope (SEM) has proven to be an extremely useful tool for obtaining information on the various parameters of each of these layers. It will be shown that the analysis of the electron beam induced voltages (EBIV) and currents (EBIC) allows not only the location of the junction itself, but also the detection of all other built-in barriers. Measurements of the EBIC permit separation of barriers less than 1 µm apart; even barriers in a direction oposite to that of the junction are detected in this manner. The peak value of EBIC is largely independent of the barrier height, but it is sensitive to variations in the concentration of the components of the lattice. Because of the exponential decrease of EBIC with the distance between primary electron beam and barrier, the minority carrier diffusion length can be obtained for all different barriers. The height of barriers, 2.5 µm separated and with the same direction as the p-n junction, can be determined quantitatively by the maximum of EBIV. By measurement of the cathodoluminescence (CL) signal regions of different recombination probabilities for radiative transitions (and therefore different luminescence yields) can be distinguished. Thus inhomogeneities of the structure can be detected. By spectral CL analysis the spatial variation of the width of the bandgap will be shown.
Sponsorship	IEEE Electron Devices Society
Starting Page	707
Ending Page	712
Page Count	6
File Size	714863
File Format	PDF
ISSN	00189383
Volume Number	22
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1975-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

A virtual scanning electron microscope. 3. A semiempirical model of the SEM signal generation

Electroluminescent gallium arsenide diodes

Au-polycrystalline GaP electroluminescent diodes

Nonlinearity estimation of scanning on a scanning electron microscope

Computer-controlled resist exposure in the scanning electron microscope

Automatic positioning of device electrodes using the scanning electron microscope

Quantum-efficiency standards for electroluminescent diodes

The design and fabrication of gallium phosphide electroluminescent diodes

Magnetic contrast in the scanning electron microscope

Microcharacterization of electroluminescent diodes with the scanning electron microscope (SEM)

Similar Documents

A virtual scanning electron microscope. 3. A semiempirical model of the SEM signal generation

Electroluminescent gallium arsenide diodes

Au-polycrystalline GaP electroluminescent diodes

Nonlinearity estimation of scanning on a scanning electron microscope

Computer-controlled resist exposure in the scanning electron microscope

Automatic positioning of device electrodes using the scanning electron microscope

Quantum-efficiency standards for electroluminescent diodes

The design and fabrication of gallium phosphide electroluminescent diodes

Magnetic contrast in the scanning electron microscope

Microcharacterization of electroluminescent diodes with the scanning electron microscope (SEM)