NDLI: Radiation induced charge trapping at the silicon sapphire substrate interface

Content Provider	IEEE Xplore Digital Library
Author	Neamen, D. Shedd, W. Buchanan, B.
Copyright Year	1963
Abstract	The radiation induced charge trapping at the silicon sapphire interface and its effect on MIS/SOS device performance has been experimentally determined for a total ionizing dose up to 108 rads (Si). These effects were determined by measuring the electrical characteristics of three types of device structures fabricated in SOS material: MIS devices with hardened and unhardened gate insulators, JFET's and diodes. The main emphasis is on the use of novel JFET structures for characterizing the SOS interface by modulating the gate depletion region against the sapphire substrate. Micrographs are also presented which show radiation induced changes in the staining characteristics of angle lapped and stained sections of the SOS interface. The experimental results indicate that positive charge is trapped in the sapphire substrate near the silicon-sapphire interface due to the total ionizing radiation. A model of the radiation induced charge trapping at the silicon sapphire interface is proposed.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	211
Ending Page	216
Page Count	6
File Size	1518186
File Format	PDF
ISSN	00189499
Volume Number	21
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1974-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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