NDLI: A 2-<formula formulatype=inline><tex Notation=TeX>$mu{hbox{m}}$</tex></formula> InGaP/GaAs Class-J Power Amplifier for Multi-Band LTE Achieving 35.8-dB Gain, 40.5% to 55.8% PAE and 28-dBm Linear Output Power

Content Provider	IEEE Xplore Digital Library
Author	Jagadheswaran, U.R. Ramiah, H. Pui-In Mak Martins, R.P.
Copyright Year	1963
Abstract	This paper describes the first linear multistage class-J power amplifier (PA) fabricated in a 2- μm InGaP/GaAs HBT process for multi-band long-term evolution (LTE) applications. It includes a three-stage topology composed by a pre-driver, driver, and a class-J main stage, to optimize the output power and power-added efficiency (PAE) over 1.7-2.05 GHz, thus encapsulating the LTE bands 1 to 4, 9 to 10, 33 to 37, and 39. This is achieved through a novel analog pre-distorter linearizer, which features two sub-circuits for AM-AM and AM-PM linearization. The PA prototype meets the standard's adjacent channel leakage ratio at a maximum linear output power of 28 dBm. Tested at 2.05 GHz and for a 16-QAM scheme, the maximum error vector magnitude is 3.38% at a 28-dBm output power, which corresponds to a PAE of 40.5%-55.8% across bands. The input return loss is 15 dB and the maximum power gain is 35.8 dB, while demonstrating an unconditional stable characteristic from dc up to 5 GHz. The die area is 950 μm×900 μm. The performance metrics compare favorably with the state-of-the-art.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	200
Ending Page	209
Page Count	10
File Size	2574778
File Format	PDF
ISSN	00189480
Volume Number	64
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Impedance Power generation Harmonic analysis Gallium arsenide Heterojunction bipolar transistors Modulation Long Term Evolution quadrature amplitude modulation (QAM) Adjacent channel leakage ratio (ACLR) error vector magnitude (EVM) gallium–arsenide (GaAs) long-term evolution (LTE) power-added efficiency (PAE) power amplifier (PA)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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