NDLI: Analysis of Tunable Internal Loss Caused by Franz–Keldysh Absorption in Transistor Lasers

Content Provider	IEEE Xplore Digital Library
Author	Hsiao-Lun Wang Yu-Hao Huang Gong-Sheng Cheng Shu-Wei Chang Chao-Hsin Wu
Copyright Year	1995
Abstract	The Franz-Keldysh (FK) absorption at the base-collector junction of a transistor laser (TL) is inevitable because of the reverse bias therein. The bias condition, thus, plays a crucial role in the determination of internal loss of TLs. In this study, effects from various facet coatings of edge-emitting TLs on the internal loss(α_int), which is influenced by the FK absorption, are investigated. Experimental analyses on the electrical and optical characteristics of these TLs at various temperatures are presented. The α_int of different coated devices at various bias voltages are then extracted from their light-versus-current curves. We demonstrate that the internal loss resulted from the FK absorption is bias dependent, and therefore tunable. By contrast, the intense field inside the cavity with highly reflective coatings on both facets may saturate the FK absorption and make it less bias controllable.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	270
Ending Page	276
Page Count	7
File Size	4708508
File Format	PDF
ISSN	1077260X
Volume Number	21
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonics Absorption Optical amplifiers Cavity resonators Integrated optics Coatings Optical devices laser internal loss Transistor laser Franz–Keldysh absorption
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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