NDLI: Design and Analysis of Laser Diodes Based on the Longitudinal Photonic Band Crystal Concept for High Power and Narrow Vertical Divergence

Content Provider	IEEE Xplore Digital Library
Author	Lei Liu Hongwei Qu Yun Liu Yufei Wang Aiyi Qi Xiaojie Guo Pengchao Zhao Yejin Zhang Wanhua Zheng
Copyright Year	1995
Abstract	High-power low-vertical-divergence laser diodes based on the longitudinal photonic band crystal (PBC) concept are investigated at a wavelength of 900 nm. The thicknesses of the layers in the longitudinal PBC waveguide are prudently optimized by mode analysis, and the lowest vertical far-field angle is found to be achieved by mode coupling. A self-consistent model is also utilized to study the device performances in detail, which shows excellent optical properties without obvious electronic performance degradation. In the experiment, continuous wave power up to 1 W/facet and vertical far-field angles of less than 10° (full-width at half-maximum) and ~50° (with 95% power content) are achieved simultaneously, with epitaxial wafer containing PBC layers of ten periods. The agreement among the design, simulation, and experiment shows a bright prospect for further reduced vertical divergence angle with high power output.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	440
Ending Page	446
Page Count	7
File Size	884704
File Format	PDF
ISSN	1077260X
Volume Number	21
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indexes Optical waveguides Diode lasers Cavity resonators Epitaxial growth Laser beams Pump lasers beam divergence Laser beam laser diodes quantum well lasers
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence

980nm InGaAs/AlGaAs quantum well high power semiconductor laser with narrow vertical divergence angle

High-Power Ultralow Divergence Edge-Emitting Diode Laser With Circular Beam

High-Performance Low-Divergence Angled Laser Diodes With Two-Dimensionally Tilted Sidewalls

Development of high power diode lasers for high performance operation

High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide

High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

High Modulation Bandwidth Implant-Confined Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

High Temperature Operation of 1060-nm High-Brightness Photonic Band Crystal Lasers With Very Low Astigmatism

Design and Analysis of Laser Diodes Based on the Longitudinal Photonic Band Crystal Concept for High Power and Narrow Vertical Divergence

Similar Documents

High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence

980nm InGaAs/AlGaAs quantum well high power semiconductor laser with narrow vertical divergence angle

High-Power Ultralow Divergence Edge-Emitting Diode Laser With Circular Beam

High-Performance Low-Divergence Angled Laser Diodes With Two-Dimensionally Tilted Sidewalls

Development of high power diode lasers for high performance operation

High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide

High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

High Modulation Bandwidth Implant-Confined Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

High Temperature Operation of 1060-nm High-Brightness Photonic Band Crystal Lasers With Very Low Astigmatism

Design and Analysis of Laser Diodes Based on the Longitudinal Photonic Band Crystal Concept for High Power and Narrow Vertical Divergence