NDLI: Soft Error-Tolerant Design of MRAM-Based Nonvolatile Latches for Sequential Logics

Content Provider	IEEE Xplore Digital Library
Author	Rajaei, R. Fazeli, M. Tabandeh, M.
Copyright Year	1965
Abstract	Magnetoresistive memories, such as spin-transfer torque random access memory and magnetic latches (M-latch), are emerging memory technologies that offer attractive features, such as high density, low leakage, and nonvolatility as compared with conventional static memory. In this paper, we have proposed two single-event upset tolerant M-latch circuits in which their CMOS peripheral circuits are robust against radiation effects. Similar to the conventional M-latch circuit, our proposed M-latches employ two magnetic tunnel junction elements. Therefore, they consume almost the same energy consumption in comparison with nonprotected M-latch circuit. The simulation results of comparison with previous work show that our proposed radiation hardened M-latches consume less energy, occupy less area, and in case of a particle strike, offer lower restoring time. Furthermore, we have thoroughly investigated the robustness of our proposed radiation-hardened M-latches against single-event multiple effects and also in the presence of process variation as serious reliability challenges in emerging nanometer scale technologies.
Sponsorship	IEEE Magnetics Society
Starting Page	1
Ending Page	14
Page Count	14
File Size	3116610
File Format	PDF
ISSN	00189464
Volume Number	51
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic tunneling Latches Clocks Robustness CMOS integrated circuits Random access memory Single event upsets Single Event Multiple Effect (SEME) Magnetic RAM (MRAM) Magnetic Tunnel Junction (MTJ) Magnetic latch (M-latch) Single Event Upset (SEU) single-event upset (SEU) magnetic RAM (MRAM) magnetic tunnel junction (MTJ) single-event multiple effect (SEME)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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