NDLI: Perspectives of Electric Field Controlled Switching in Perpendicular Magnetic Random Access

Content Provider	IEEE Xplore Digital Library
Author	Guchang Han Hao Meng Jiancheng Huang Naik, V.B. Cheow Hin Sim Tran, M. Lim, S.T.
Copyright Year	1965
Abstract	Based on requirements for spin-transfer torque (STT)-magnetic random access memory (MRAM), fundamental challenges in current CoFeB- and MgO-based STT-MRAM with perpendicular magnetic anisotropy (PMA) are addressed when scaling down to sub-20 nm. Electric-field (EF)-induced PMA modulation has been proposed to significantly reduce the switching current. As EF alone is unable to induce the magnetization reversal but PMA reduction, additional mechanisms should be applied to realize EF switching. We discuss difficulties in the implementation of currently reported two switching approaches and propose a new approach using Oersted field guided EF switching in MRAM arrays. Our latest experimental results on the EF effect show that the spin reorientation transition can be realized at an EF of 0.8 V/nm for the top-pin CoFeB/MgO magnetic tunnel junctions (MTJs) with the thermal stability factor of as high as 57 in the absence of EF. However, the bidirectional switching of the free layer cannot be achieved at a fixed biasing field, which is attributed to small STT effect and switching uncertainty due to unipolar feature of EF-induced PMA modulation. Perspective of EF-MRAM is analyzed based on currently published data on EF efficiency. We show that the EF switching is very promising for future MRAM applications in spite of challenges in materials and MTJ stack engineering.
Sponsorship	IEEE Magnetics Society
Starting Page	1
Ending Page	9
Page Count	9
File Size	1032041
File Format	PDF
ISSN	00189464
Volume Number	51
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Magnetic tunneling Magnetization Writing Thermal stability Perpendicular magnetic anisotropy spin-transfer torque (STT) Electrical field (EF) low-power switching magnetic random access memory (MRAM)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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