NDLI: Spin Current and Its Electrical Detection in Semiconductors

Content Provider	IEEE Xplore Digital Library
Author	Miah, M.I.
Copyright Year	1965
Abstract	The idea of utilizing the electron spin in semiconductor devices leads to the growth of the field semiconductor spintronics. This may result in the development of novel electronic devices with advantages over conventional electronics. However, the basic requirements necessary in developing semiconductor spintronic devices are the efficient generation/injection of spins (or spin current) in/into a semiconductor such that they can be transported reliably, i.e., without spin relaxation, over reasonable distances and, finally, detection of them. Since in spintronic devices, the information is carried by the electron spin, an electrical means of detecting spin current in semiconductors is desirable for fully exploring the possibility of utilizing spin degree of freedom and for possible device applications. Here, I describe an experiment which detects the spin current electrically in semiconductors by investigating the effect of a longitudinal electric field on the spin-polarized electrons generated by a circularly polarized light. The experiment observes the effect as a pure anomalous Hall voltage resulting from non-equilibrium magnetization induced by the spin-carrier electrons accumulating at the transverse edges of the sample as a result of asymmetries in scattering for spin-up and spin-down electrons in the presence of spin-orbit interaction. The results are presented by discussing the dominant spin relaxation mechanisms in semiconductors, and in relation with the recent understanding in this area.
Sponsorship	IEEE Magnetics Society
Starting Page	1
Ending Page	4
Page Count	4
File Size	525604
File Format	PDF
ISSN	00189464
Volume Number	50
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Magnetoelectronics Hall effect Magnetization Couplings Temperature measurement spin-orbit interaction Anomalous Hall effect (AHE) spin current
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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