NDLI: A 90–100-GHz 4 <formula formulatype=inline> <tex Notation=TeX>$times$</tex></formula> 4 SiGe BiCMOS Polarimetric Transmit/Receive Phased Array With Simultaneous Receive-Beams Capabilities

Content Provider	IEEE Xplore Digital Library
Author	Golcuk, F. Kanar, T. Rebeiz, G.M.
Copyright Year	1963
Abstract	This paper presents a 4 × 4 transmit/receive (T/R) SiGe BiCMOS phased-array chip at 90-100 GHz with vertical and horizontal polarization capabilities, 3-bit gain control (9 dB), and 4-bit phase control. The 4 × 4 phased array fits into a 1.6×1.5 mm² grid, which is required at 94 GHz for wide scan-angle designs. The chip has simultaneous receive (R_x) beam capabilities (V and H) and this is accomplished using dual-nested 16:1 Wilkinson combiners/divider with high isolation. The phase shifter is based on a vector modulator with optimized design between circuit level and electromagnetic simulation and results in 1 dB and gain and phase error, respectively, at 85-110 GHz. The behavior of the vector modulator phase distortion versus input power level is investigated and measured, and design guidelines are given for proper operation in a transmit (Tx) chain. The V and H Rx paths result in a gain of 22 and 25 dB, respectively, a noise figure of 9-9.5 (max. gain), and 11 dB (min. gain) measured without the T/R switch, and an input P1 dB of -31 to -26 dBm over the gain control range. The measured output P_sat is ~ -5 dBm per channel, limited by the T/R switch loss. Measurements show ±0.6- and ±0.75-dB variation between the 4 × 4 array elements in the Tx mode (P_sat) and Rx mode, respectively, and 40-dB coupling between the different channels on the chip. The chip consumes 1100 mA from a 2-V supply in both the Tx and Rx modes. The design can be scaled to >10 000 elements using polyimide redistribution layers on top of the chip and the application areas are in W-band radars for landing systems.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	3099
Ending Page	3114
Page Count	16
File Size	4434458
File Format	PDF
ISSN	00189480
Volume Number	61
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	$W$-band Phase shifter phased array receiver SiGe BiCMOS transmit/receive (T/R) module transmitter
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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