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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Matsuda, S. Hara, M. Miura, M. Matsuda, T. Ueda, U.M. Satoh, Y. Hashimoto, K. |
| Copyright Year | 1986 |
| Abstract | This paper investigates acoustic properties, including the temperature coefficient of elasticity (TCE), of fluorine-doped silicon oxide (SiOF) films and proposes the application of the films to the temperature compensation of RF SAW devices. From Fourier transform infrared spectroscopy (FT-IR), SiOF films were expected to possess good TCE properties. We fabricated a series of SAW devices using the SiOF-overlay/Cu-grating/LiNbO3-substrate structure, and evaluated their performance. The experiments showed that the temperature coefficient of frequency (TCF) increases with the fluorine content r, as we expected from the FT-IR measurement. This means that the Si-O-Si atomic structure measurable by the FT-IR governs the TCE behavior of SiO2-based films even when the dopant is added. In comparison with pure SiO2 with the film thickness h of 0.3 wavelengths (λ), TCF was improved by 7.7 ppm/°C without deterioration of the effective electromechanical coupling factor K2 when r = 3.8 atomic % and h = 0.28λ. Fluorine inclusion did not obviously influence the resonators' Q factors when r <; 8.8 atomic %. |
| File Size | 397435 |
| File Format | |
| ISSN | 08853010 |
| Volume Number | 59 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Films Temperature measurement Surface acoustic wave devices Temperature Educational institutions Atomic measurements |
| Content Type | Text |
| Resource Type | Article |
| Subject | Acoustics and Ultrasonics Instrumentation Electrical and Electronic Engineering |
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