NDLI: Improving Light Extraction Efficiency of GaN-Based LEDs by Al<formula formulatype=inline><tex Notation=TeX>$_{bm x}$</tex></formula>Ga<formula formulatype=inline><tex Notation=TeX>$_{{bf 1}{bm -}{bm x}}$</tex></formula>N Confining Layer and Embedded Photonic Crystals

Content Provider	IEEE Xplore Digital Library
Author	Hui Gao Kang Li Fan-Min Kong Xin-Lian Chen Zhen-Ming Zhang
Copyright Year	1995
Abstract	The interaction of low-order modes with photonic crystals (PhCs) has been a promising technique to increase light extraction efficiency (LEE) of LEDs. In this paper, numerical simulations based on the finite-difference time-domain method were carried out to explore different mechanisms that can effectively improve this interaction. The results showed that deeply etched PhCs have inefficient light extraction since they would decrease the effective thickness of the unetched layer and cut off some guided modes. By applying the Al_xGa_1-xN confining layer, the distribution of guided modes was changed. The cap layer mode was isolated from the GaN buffer, and larger LEE was achieved. Furthermore, dramatic increments with oscillations were found in the LEE by using embedded PhCs. Resonances of the Bloch mode localized within these PhCs, which caused the oscillations, were further modified by a shallow Al_xGa_1-xN confining layer. With the optimized parameters, over eightfold increment in LEE was achieved. In addition, dislocations caused by higher Al content and thicker Al_xGa_1-xN layer were avoided. This proposed structure could be a very promising candidate for high extraction efficiency LEDs.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1650
Ending Page	1660
Page Count	11
File Size	1181495
File Format	PDF
ISSN	1077260X
Volume Number	18
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Surface treatment Gallium nitride Indexes Finite difference methods Photonic crystals Computational modeling light extraction efficiency (LEE) Al$_x$Ga$_{1-x}$ N confining layer cap layer mode (CLM) embedded photonic crystals (PhCs) finite-difference time-domain (FDTD) LED
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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