NDLI: Gain-Bandwidth Analysis of Broadband Darlington Amplifiers in HBT-HEMT Process

Content Provider	IEEE Xplore Digital Library
Author	Shou-Hsien Weng Hong-Yeh Chang Chau-Ching Chiong Yu-Chi Wang
Copyright Year	1963
Abstract	Broadband Darlington amplifiers using a GaAs heterojunction bipolar transistor (HBT) high electron-mobility transistor (HEMT) process are reported in this paper. The gain-bandwidth analysis of the Darlington amplifiers using HEMT-HBT, HBT-HEMT, HEMT-HEMT, and HBT-HBT configurations are presented. The bandwidth, gain, input, and output impedances are investigated with transistor size, feedback resistances, and series peaking inductance. The design methodology of the broadband Darlington amplifier in the HBT-HEMT process is successfully developed, and the direct-coupled technique is also addressed for high-speed data communications. Furthermore, two monolithic HEMT-HBT and HEMT-HEMT Darlington amplifiers are achieved from dc to millimeter wave, and successfully evaluated with a 25-Gb/s eye diagram. The HEMT-HBT Darlington amplifier demonstrates the best gain-bandwidth product with good input/output return losses among the four configurations.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	3458
Ending Page	3473
Page Count	16
File Size	4375602
File Format	PDF
ISSN	00189480
Volume Number	60
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heterojunction bipolar transistors HEMTs Resistance Capacitance Bandwidth Broadband communication MMICs monolithic microwave integrated circuit (MMIC) Amplifier GaAs heterojunction bipolar transistor (HBT) high electron-mobility transistor (HEMT)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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