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Development of gallium arsenide solar cells (Document No: 19730016372)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Organization | The National Aeronautics and Space Administration (NASA) |
| Copyright Year | 1973 |
| Description | The potential of ion implantation as a means to the development of high efficiency gallium arsenide solar cells is investigated. Summaries are included of the results of computer calculations of GaAs cell characteristics, based on a model which includes the effects of surface recombination, junction space-charge region recombination, and built-in fields produced by nonuniform doping in the region; of the fabrication technology developed under the program; and of the results of electrical and optical measurements on the samples produced during the program. It was determined that measured AMO efficiencies were more than a factor of two lower than the calculated values. |
| File Size | 1938534 |
| File Format | |
| Alternate Webpage(s) | http://www.archive.org/details/nasa_techdoc_19730016372 |
| Archival Resource Key | ark:/13960/t3bz6x26m |
| Language | English |
| Publisher Date | 1973-03-01 |
| Access Restriction | Open |
| Subject Keyword | Auxiliary Systems Brayton Cycle Gas Bearings Thrust Bearings Argon Gas Flow Hydrodynamics Hydrostatics Journal Bearings Performance Tests Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
