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Hemt frequency doubler with output at 300 ghz
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Bruston, Jean Samoska, Lorene |
| Copyright Year | 2005 |
| Description | An active frequency doubler in the form of an InP-based monolithic microwave integrated circuit (MMIC) containing a high-electron-mobility transistor (HEMT) has been demonstrated in operation at output frequencies in the vicinity of 300 GHz. This is the highestfrequency HEMT doubler reported to date, the next-highest-frequency active HEMT doubler having been previously reported to operate at 180 GHz. While the output power of this frequency doubler is less than that of a typical Schottky diode, this frequency doubler is considered an intermediate product of a continuing effort to realize the potential of active HEMT frequency doublers to operate with conversion efficiencies greater than those of passive diode frequency doublers. An additional incentive for developing active HEMT frequency doublers lies in the fact that they can be integrated with amplifiers, oscillators, and other circuitry on MMIC chips. The circuitry of the doubler MMIC (see Figure 1) features grounded coplanar waveguides. Air bridges and vias are used to make contact with the ground plane. The HEMT is biased for Class-A operation (in which current is conducted throughout each cycle of oscillation), which would ordinarily be better suited to linear amplification than to frequency doubling. Ordinarily, class-B operation (in which current is conducted during about half of each cycle of oscillation) would be more suitable for frequency doubling because of the essential nonlinearity of partial-cycle conduction. The reason for the unusual choice of class A was that computational simulations had shown that in this case, the efficiency in class B would be less than in class A. The input matching circuit of this doubler includes transmission lines that afford a good impedance match at the fundamental frequency, plus an open stub to prevent leakage of the second harmonic through the input terminals. The output circuit was designed to suppress the fundamental while providing a good match for the second harmonic. |
| File Size | 187845 |
| Page Count | 2 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20110014884 |
| Archival Resource Key | ark:/13960/t08w8cp56 |
| Language | English |
| Publisher Date | 2005-05-01 |
| Access Restriction | Open |
| Subject Keyword | Man/system Technology And Life Support Schottky Diodes Chips Planar Structures Frequencies Diodes Oscillators Integrated Circuits Transmission Lines Simulation Electron Mobility Microwave Circuits High Electron Mobility Transistors Transistors Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
