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Two-step plasma process for cleaning indium bonding bumps
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hoenk, Michael E. Dickie, Matthew R. Vasquez, Richard P. Jones, Todd J. Greer, Harold F. Nikzad, Shouleh |
| Copyright Year | 2009 |
| Description | A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process. |
| File Size | 573234 |
| Page Count | 2 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20090022331 |
| Archival Resource Key | ark:/13960/t9w142368 |
| Language | English |
| Publisher Date | 2009-06-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Metal Oxides Integrated Circuits Chips Electronics Cleaning Indium Compounds Bonding Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |