Loading...
Please wait, while we are loading the content...
Similar Documents
Dual band deep ultraviolet algan photodetectors
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Gaska, R. Miko, L. Franz, D. Aslam, S. Pugel, D. Stahle, C. Zhang, J. P. Guan, B. |
| Copyright Year | 2007 |
| Description | We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation. |
| File Size | 286060 |
| Page Count | 11 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20080044050 |
| Archival Resource Key | ark:/13960/t4fn64w3h |
| Language | English |
| Publisher Date | 2007-12-12 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Fabrication Electric Potential Ultraviolet Radiation Aluminum Nitrides N-p-n Junctions Photometers Detection Switching Illuminating Homojunctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
