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Silicon germanium semiconductive alloy and method of fabricating same
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2008 |
| Description | A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. |
| File Size | 471019 |
| Page Count | 6 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20080020430 |
| Archival Resource Key | ark:/13960/t5k985f0g |
| Language | English |
| Publisher Date | 2008-03-11 |
| Access Restriction | Open |
| Subject Keyword | Metals And Metallic Materials Fabrication Single Crystals Patents Germanium Alloys Silicon Alloys Diamonds Substrates Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
